| PART |
Description |
Maker |
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S376 |
Silicon epitaxial planar type UHF BAND, 15 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
| BA128210 BA1283-TR3 |
Band Switching Diodes
DIODE SILICON, VHF BAND, MIXER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| CHV2242A CHV2242A-99F_00 CHV2242A-99F/00 |
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
| 2SC5295 2SC5295S |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
Silicon NPN epitaxial planer type(For 2 GHz band low-noise amplification) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Transistors
|
PANASONIC CORP
Panasonic, Corp.
Matsshita / Panasonic
Panasonic Semiconductor
|
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